Electronic structure of Cu(100)(2 root x root 2)R45 degrees-O surface: angle-resolved photoemission spectroscopy and tight-binding calculation

Citation
D. Sekiba et al., Electronic structure of Cu(100)(2 root x root 2)R45 degrees-O surface: angle-resolved photoemission spectroscopy and tight-binding calculation, SURF SCI, 470(1-2), 2000, pp. 43-52
Citations number
26
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
470
Issue
1-2
Year of publication
2000
Pages
43 - 52
Database
ISI
SICI code
0039-6028(200012)470:1-2<43:ESOCRX>2.0.ZU;2-Y
Abstract
The electronic structure of Cu(1 0 0)(2 root2 x root2)-O surface is investi gated by angle resolved ultraviolet photoemission spectroscopy with p- and s-polarized light. A tight-binding two-dimensional energy band calculation is successfully made to reproduce the experimental band dispersions. In the calculation, the parameters (Slater-Koster two-center integrals) determine d for Cu(1 1 0)p(2 x 1)-O surface are used except the on-sire energy of oxy gen 2p state. Those parameters reproduce the oxygen induced bonding states along <(<Gamma>)over bar>-(Y) over bar and the anti-bonding states along <( <Gamma>)over bar>-(M) over bar quantitatively. (C) 2000 Elsevier Science B. V. All rights reserved.