AN ELECTRICALLY CONTROLLED BRAGG REFLECTOR INTEGRATED IN A RIB SILICON-ON-INSULATOR WAVE-GUIDE

In this letter, we present a novel structure for light amplitude modul ation based on a lateral p-i-n diode combined with a Bragg reflector w hich transforms the phase shift induced by the plasma dispersion effec t in the intrinsic region of the diode into a voltage controlled varia tion of the reflectivity of the Bragg mirror. Numerical simulations sh ow a modulation depth of 50% achieved in about 12 ns with a power diss ipation of 4.0 mW and an insertion loss of 1.0 dB. The device is demon strated to be very attractive in terms of power dissipation as compare d to a Mach-Zehnder interferometer occupying the same area on chip. (C ) 1997 American Institute of Physics.