SI GE HETEROSTRUCTURE ON SULFUR PASSIVATED GAAS(110)/

The structure and interface state density of thin Si and Si/Ge heterol ayers on sulphur passivated GaAs (110) were studied by capacitance-vol tage measurements, x-ray scattering, and x-ray absorption with synchro tron radiation. The results show that the reduction of interfacial sta te density by utilizing Si or Si/Ge thin heterolayers on sulphur passi vated GaAs (110) correlates better with the short-range electronic str ucture at the interface than the commonly believed long-range atomic a bruptness. (C) 1997 American Institute of Physics.