We have investigated a particular class of photovoltaic quantum well i
ntersubband photodetectors. Each period of the active region in these
structures consists of four zones, namely an excitation zone, a drift
zone, a capture zone, and a tunneling zone. The devices show pronounce
d photovoltaic behavior and high detectivities. In particular, the res
ponsivity without external bias is substantially enhanced if resonant
carrier capture is achieved due to an appropriate design of the captur
e zone. (C) 1997 American Institute of Physics.