OXYGEN AGGREGATION IN CZOCHRALSKI-GROWN SILICON HEAT-TREATED AT 450 DEGREES-C UNDER COMPRESSIVE STRESS

It has been established that the oxygen aggregation processes in Czoch ralski-grown silicon (Ct-Si) at 450 degrees C are strongly affected by high hydrostatic pressure. We observed the enhanced production of sha llow thermal donors with ionization energies of 30-40 meV and deep don ors at approximate to E-C-0.1 eV under a pressure of 1 GPa. In contras t, the concentration of the well-known double thermal donors was found to be much less than that in Cz-Si heat treated without stress. The l atter effect may be associated with the involvement of self-interstiti als in their formation. The enhanced production of other thermal donor s is thought to be caused by increasing diffusivity of oxygen under th e high stress. (C) 1997 American Institute of Physics.