EFFECT OF CRYSTALLINITY ON THE MAGNETORESISTANCE IN PEROVSKITE MANGANESE OXIDE THIN-FILMS

Citation
R. Shreekala et al., EFFECT OF CRYSTALLINITY ON THE MAGNETORESISTANCE IN PEROVSKITE MANGANESE OXIDE THIN-FILMS, Applied physics letters, 71(2), 1997, pp. 282-284
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
2
Year of publication
1997
Pages
282 - 284
Database
ISI
SICI code
0003-6951(1997)71:2<282:EOCOTM>2.0.ZU;2-8
Abstract
We report our study of the effect of crystallinity on the magnetoresis tance in epitaxial and polycrystalline La2/3Ba1/3MnO3 and La2/3Ca1/3Mn O3 thin films. Magnetoresistance in epitaxial films exhibits field dep endence and temperature dependence similar to bulk single crystals and sintered bulk ceramics. The polycrystalline films exhibit a markedly different behavior. The magnetoresistance in this case shows either a monotonic increase or saturation with decreasing temperature in contra st to that of epitaxial films in which the magnetoresistance peaks clo se to the ferromagnetic transition temperature. The field dependence i n the polycrystalline films is;also remarkably different. At low field s, we observe a sharp drop in resistance followed by a more gradual de crease at higher fields. Our data suggest that in addition to the intr insic magnetoresistance, grain-boundary transport contributes signific antly to the magnetoresistance in polycrystalline films. (C) 1997 Amer ican Institute of Physics.