Impact of the device scaling on the low-frequency noise in n-MOSFETs

The impact of device scaling on modern MOS technology is discussed in terms of the random telegraph signals (RTSs) and low-frequency noise in n-MOSFET s with gradually decreased channel widths. RTSs with very large amplitude ( > 60%) ale observed in the devices with ultranarrow channels at room temper ature for the first time. Furthermore, low-frequency noise spectra having b oth 1/f' and Lorentzian type are found separately in the same ultra-narrow channel at different gate bias voltage, whereas only 1/f' noise is observed in relatively wide channels. The observations strongly suggest that low-fr equency noise in weak inversion dominantly suffer from carrier mobility flu ctuation rather than carrier number fluctuation in ultra-narrow channels, w hich is confirmed by numerical simulations.