Properties of ITO films prepared by rf magnetron sputtering

Recently, a detailed study of the properties of ITO thin films deposited un der various preparation conditions using the rf magnetron sputtering techni que (from ITO target in pure Ar gas) has been undertaken in our laboratory. The effect of substrate temperature has been studied in a previous paper. Here the results of a study of the structural, electrical and optical prope rties of the ITO films with different thickness are presented. The figure o f merit for the films, which is a measure of the quality of the films as tr ansparent conductive layers for photovoltaic applications, has been evaluat ed.