Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry-Perot lasers

GaInAs quantum wire (QWR) heterostructures have been grown by molecular bea m epitaxy using the strain-induced lateral-layer ordering (SILO) process. B road-area Fabry-Perot QWR lasers have been fabricated from this material. T he lasing wavelength from the QWR laser shifts at a rate of 0.9 Angstrom/de greesC between 77 and 300 K compared to 4.6 Angstrom/degreesC for a quantum well laser control sample. Furthermore, the gain spectra of the QWR laser are derived from the amplified spontaneous emission spectra at 77 and 300 K using the Hakki-Paoli method. The gain peak is also stabilized against tem perature changes indicating that temperature stable lasing behavior seen in SILO grown GaInAs QWR Fabry-Perot laser diodes is due to a temperature sta ble band gap. (C) 2001 American Institute of Physics.