Spike annealing of boron-implanted polycrystalline-silicon on thin SiO2

Spike thermal annealing is examined for electrical activation of B implants into 100 nm Si films deposited over 1.5 to 2.4 nm thermally grown SiO2. Th ese structures simulate gate stacks in advanced p-type metal-oxide-Si (PMOS ) devices. Spike anneals, at minimized thermal budget, are shown to yield h igher carrier concentrations in PMOS polycrystalline-silicon (poly-Si), as compared to conventional rapid thermal annealing. The activation energy for B diffusion through SiO2 is found to be 3.71 to 3.83 eV and near that prev iously reported for furnace anneals. Boron penetration appears unaffected b y photoexcitation from heating lamps. (C) 2001 American Institute of Physic s.