Observation of crossing pores in anodically etched n-GaAs

Authors
Langa, S Carstensen, J Christophersen, M Foll, H Tiginyanu, IM
Citation
S. Langa et al., Observation of crossing pores in anodically etched n-GaAs, APPL PHYS L, 78(8), 2001, pp. 1074-1076
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
8
Year of publication
2001
Pages
1074 - 1076
Database
ISI
SICI code
0003-6951(20010219)78:8<1074:OOCPIA>2.0.ZU;2-H
Abstract
Pores in GaAs in the micrometer range and oriented in < 111 > directions ha ve been observed during the anodization of GaAs in aqueous HCl electrolytes . A direct evidence of pores intersection is presented which is a very prom ising feature for three-dimensional micro- and nanostructuring of III-V com pounds for the production of photonic materials. (C) 2001 American Institut e of Physics.