Comparison of Josephson vortex flow transistors with different gate line configurations

We performed numerical simulations and experiments on Josephson vortex flow transistors based on parallel arrays of YBa2Cu3O7-delta grain boundary jun ctions with a cross gate line allowing us to operate the same devices in tw o different modes named the Josephson fluxon transistor (JFT) and Josephson fluxon-antifluxon transistor (JFAT). The simulations yield a general expre ssion for the current gain versus number of junctions and normalized loop i nductance and predict higher current gain for the JFAT. The experiments are in good agreement with simulations and show improved coupling between gate line and junctions for the JFAT as compared to the JFT. (C) 2001 American Institute of Physics.