By means of photoluminescence (PL) and sub-band-gap (sub-E-g) optical illum
ination, the degradation and restoration of ferroelectric properties in str
ontium bismuth tantalate thin films have been investigated, and the existen
ce of band-gap states is demonstrated. It is shown that the suppression and
recovery of ferroelectricity are closely correlated with the change of PL
intensity, since both switchable polarization and PL are related to Ta5+ io
ns in the TaO6 octahedron. Furthermore, the electric-field-induced restorat
ion increases dramatically by the aid of sub-band-gap light (2.5 eV less th
an or equal toh nu less than or equal toE(g)) illumination absorbed in band
-gap states. (C) 2001 American Institute of Physics.