Ferroelectric properties of alkoxy-derived CaBi4Ti4O15 thin films on Pt-passivated Si

CaBi4Ti4O15 (CBTi144) thin films were prepared by spin coating a precursor solution of metal alkoxides. As-deposited thin films began crystallization below 550 degreesC and reached full crystallinity of a single phase of laye red perovskite at 650 degreesC via rapid thermal annealing in oxygen. The 6 50 degreesC annealed CBTi144 thin film showed random orientation on Pt-pass ivated Si substrate and exhibited P-E hysteresis loops. The remanent polari zation (P-r) and coercive electric field (E-c) were 9.4 muC/cm(2) and 106 k V/cm, respectively, at 11 V. The dielectric constant and loss factor were 3 00 and 0.033, respectively, at 100 kHz. (C) 2001 American Institute of Phys ics.