Plasma-assisted MOCVD growth of superconducting NbN thin films using Nb dialkylamide and Nb alkylimide precursors

Authors
Liu, X Babcock, JR Lane, MA Belot, JA Ott, AW Metz, M Kannewurf, CR Chang, RPH Marks, TJ
Citation
X. Liu et al., Plasma-assisted MOCVD growth of superconducting NbN thin films using Nb dialkylamide and Nb alkylimide precursors, CHEM VAPOR, 7(1), 2001, pp. 25
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
7
Issue
1
Year of publication
2001
Database
ISI
SICI code
0948-1907(200101)7:1<25:PMGOSN>2.0.ZU;2-1
Abstract
The first example of the use of metal-organic precursors for depositing NbN superconducting thin films is described. The study, which employed niobium (IV) and niobium(v) (see Figure) pulsed source precursors and hydrazine pla sma as the nitrogen source, indicates that T-c is highly dependent on the l attice parameters and level of oxygen impurities, which are in turn governe d by growth and post-deposition annealing temperatures.