Static vapor pressure measurement of low volatility precursors for molecular vapor deposition below ambient temperature

Static vapor pressure measurements of volatile metal precursors, in the pre ssure range 10(-1) Pa to 10(3) Pa, are described. The vapor pressures and t he sublimation or evaporation enthalpies, in the range 265 K-300 K, of Mo(C O)(6) (77.7 kJ mol(-1)), two dimethyl(beta -diketonato)gold(III) complexes, Me2Au(tfa) (83.5 kJ mol(-1)) and Me2Au(hfa) (68.1 kJ mol(-1)), and an inor ganic Rh precursor, [(PF3)(2)RhCl](2) (90.8 kJ mol(-1)), were determined. T he sublimation enthalpy for Mo(CO)(6) was larger by more than 10 % in the m easured temperature range than reported values measured at higher temperatu res. At ambient temperatures, partial decomposition was observed only for t he gold precursors.