A tight binding calculation of delta-doped quantum wells in Si

We present a tight binding (TB) calculation of the electronic structure of delta -doped quantum wells in Si. A self-consistent potential obtained in t he Thomas-Fermi (TF) approximation is considered as an external potential i n our semi-empirical TB model. A sp(3)s* basis is used and nearest neigbour s are considered to treat the Si bulk crystal doped with B. We change the s emi-empirical Hamiltonian matrix of (001) direction in each atomic layer, a dding the value of the self-consistent external potential in this layer to all diagonal elements of the matrix. We compare the TB results with the res ults obtained in the envelope function approximation (EFA) and with the exp erimental data. (C) 2001 Elsevier Science B.V. All rights reserved.