Redistribution of Ni implanted into InP

The redistribution of Ni in InP is studied by annealing samples of InP impl anted with 0.9 MeV Ni at 60 degrees angle of ion incidence with respect to target surface normal as a function of dose (8.5 x 10(12)-4.5 x 10(15) cm(2 )). Ni profiles are measured by secondary ion mass spectrometry (SIMS) and implantation induced damage by Rutherford backscattering spectrometry in ch anneling (RBS/C) condition. The highest dose sample is characterised by rem arkable Ni accumulation near the surface (at similar to 0:3R(np)) that has not been observed earlier along with two other distinct accumulation zones at R-np+DeltaR(np) and 2:2R(np) after annealing at 650 degreesC for 30 min. Here, R-np is the normal component of the projected range for oblique angl e bombardment.