Defect creation kinetics in swift heavy ions, protons and electrons irradiated germanium

N-type lightly doped germanium has been irradiated at room temperature with different particles: swift heavy ions, protons and electrons. Hall effect measurements have been carried out versus either the temperature (at a give n fluence) or the fluence (at room temperature). Using the level positions determined by DLTS results previously reported, we extract from the Hall co efficient simulation at low doses the creation kinetics of the irradiation- induced defects. These defects are typically at room temperature the A-cent re, the E-centre and the divacancy complexes. At higher doses, in the case of electron irradiation, these simulations are still feasible using only th e previous defects mentioned above since the material leads towards a quasi -intrinsic state. But we point out that it is necessary in the case of prot on and swift heavy ion irradiations to add an acceptor level in the forbidd en band probably associated with a multivacancy defect. Indeed, in these ca ses, the material becomes p-type. Finally, the experimental introduction ra tes are compared to the theoretical ones. It appears that the relative dama ge creation efficiency is not very different from a projectile to another, proving that there is no strong dependence on the electronic energy loss.