Sol-gel is one of th most attractive techniques for production of silica-on
-silicon integrated optical devices. In fact, it combines low cost with fle
xibility and ease of doping; thus, nonlinear and active compounds can be ef
fectively included in the silica matrix. Here, the feasibility of applying
the sol-gel technique to the realization of an erbium-doped optical amplifi
er is reported on, operating in the third telecommunication window. In part
icular, the development of an optimum strategy for the design and fabricati
on of a guiding structure in the strip-loaded configuration is described. D
esign optimization results, as well as fabrication results and measured cha
racteristics, are described and discussed.