Recent years have seen the rapid evolution of silicon-based optoelectronics
. The absorption properties of Si1-xGex alloys make them excellent material
s for the realisation of photodetectors operating at the near-infrared wave
lengths of 1.3 and 1.55 mum which are important for fibre optic communicati
on systems. An important design consideration for such systems is the effic
ient coupling of optical fibres to optoelectronic integrated circuits. A Si
1-xGex rib waveguide spot-size transformer is presented that performs two e
ssential roles: the transformation of the large spot fibre to a small spot
waveguide mode, and subsequently the transfer of the mode from a passive Si
waveguiding region to an active Si1-xGex region where optical absorption m
ay occur. This transformation is accomplished by the use of a tapered waveg
uide structure. An analysis technique based on the spectral index method is
used to investigate the local modal behaviour of the structure and experim
ental results confirm its successful operation.