Photoelectrochemical (PEC) cell based on chemically deposited nanocrystalline Bi2Se3-Sb2Se3 composite thin films

Nanocrystalline Bi2Se3-Sb2Se3 composite thin films have been deposited by c hemical bath deposition (CBD) method onto fluorine doped tin oxide (FTO) co ated glass substrate (sheet resistance 70-100 K Ohm -m(2)) from an aqueous alkaline bath ( pH = 9.0) at room temperature (27 degreesC). Bismuth nitrat e and potassium antimony tartarate are used as Bi3+ and Sb3+ ion sources, r espectively with sodium selenosulphite as Se2- ion source. Films have been annealed at 175 degreesC for 4 hr in air. Slight enhancement in crystallini ty iss observed after annealing. These annealed films are used in photoelec trochemical (PEC) cell with configuration as n-Bi2Se3-Sb2Se3 / 0.1 M ( NaOH -Na2S-S)/ C. Its performance has been tested and results are reported.