Angular dependence of impurity scattering in II-VI compound semiconductors

Authors
Mallick, PS Mukhopadhyay, D
Citation
Ps. Mallick et D. Mukhopadhyay, Angular dependence of impurity scattering in II-VI compound semiconductors, I J PA PHYS, 38(11), 2000, pp. 788-790
Citations number
8
Categorie Soggetti
Physics
Journal title
INDIAN JOURNAL OF PURE & APPLIED PHYSICS
ISSN journal
00195596 → ACNP
Volume
38
Issue
11
Year of publication
2000
Pages
788 - 790
Database
ISI
SICI code
0019-5596(200011)38:11<788:ADOISI>2.0.ZU;2-D
Abstract
The probability of scattering by ionized impurities has been calculated as a function of the scattering angle in n-type II-VI compound semiconductors like ZnO, ZnS, CdS, CdSe and CdTe at 77 K. It is found that for electron en ergies higher than 0.01 eV, almost-zero angle scatterings are most prevalen t.