Experimental results obtained using extreme ultraviolet laboratory tool atnew SUBARU

We have designed three-aspherical-minor optics that meets the specification s for 0.1 mum generation lithography, and are developing an extreme ultravi olet lithography (EUVL) laboratory tool suitable for device fabrication exp eriments. It operates at a wavelength of 13.5 nm and employs a three-mirror imaging system with a numerical aperture of 0.1. It is capable of replicat ing 65 nm patterns in an exposure field of 30 mm x 1 mm size. First, single -layer chemically amplified resists are investigated using the synchrotron radiation (SR) source of New SUBARU. From the sensitivity curve, it was fou nd that the positive-tone resist DP603 and the negative-tone resist SAL601 have high gamma values and high sensitivities to the extreme ultraviolet ex posure wavelength. Furthermore, exposure experiments using the three-aspher ical mirror imaging system were performed. A minimum line width of 56 nm wa s demonstrated in an exposure area of 10 mm x 1 mm. We confirmed that the t hree-aspherical mirror imaging system is useful for developing EUVL technol ogy.