Novel organic bottom antireflective coating materials for 193 nm lithography

We designed novel hybrid type bottom antireflective coating (BARC) material s for ArF lithography. The optimum extinction coefficient (k) value of the new organic BARC materials (HEART004) is 0.71 at a 32 nm film thickness. It s plasma etch rate is higher than that of ArF photoresist under Cl-2/O-2 pl asma etch conditions. The critical dimension (CD) uniformity of 0.13 mum US patterns could be controlled below 10 nm and the etch bias, which represen ts the CD difference before and after BARC etching, could be less than 10 n m. Our new organic BARC materials show a good compatibility with both (meth )acrylate-type photoresist (PAR101, PAR710) and cycloolefin/maleic-anhydrid e-type photoresist (DHA1001) without any undercut or footing.