Quantum dots in carbon nanotubes

Citation
K. Ishibashi et al., Quantum dots in carbon nanotubes, JPN J A P 1, 39(12B), 2000, pp. 7053-7057
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
12B
Year of publication
2000
Pages
7053 - 7057
Database
ISI
SICI code
Abstract
A technology to fabricate electrical contacts on individual single-wall car bon nanotubes has been developed, and electrical measurements are carried o ut below 4.2 Kelvin. The electrical transport property at low temperatures has basically been characterized as a quantum dot with a pronounced Coulomb blockade effect and zero dimensional confined levels. A microwave response to the nanotube quantum dot is also studied to further characterize the qu antum dot. It is discussed how and where the tunnel barrier is formed to re alize the quantum dot in a sample. The microwave irradiation effect on the quantum dot turns out to be a classical modulation of the source drain volt age, and is discussed considering the various energy and time scales associ ated with the transport.