Lifetime and spin relaxation time measurements of micro-fabricated GaAs tips

The lifetime and the spin relaxation time of excited electrons in GaAs micr otips tailored for scanning tunneling microscope (STM) with spin polarizati on detection were measured by time-resolved polarized photoluminescence at room temperature. The electron lifetime obtained from the tip-fabricated p- type GaAs substrate was about 20 ps shorter than that obtained from the GaA s substrate without microtips. This is attributed to the enhanced surface r ecombination in the microtip. The spin relaxation time was comparable to th e electron lifetime for the tip-fabricated GaAs substrate. From electron li fetime and spin relaxation time, a respectable spin polarization of about 2 0% was evaluated in the tip-fabricated GaAs substrate, which was about 1.2 times larger than that in the GaAs substrate without microtips, under the 0 degrees incident angle of the excitation light. The influence of oblique i ncidence of the excitation light is also discussed.