Low dark current (210 nA/cm(2) at -1 V), high shunt resistance area product
(0.3 M Omega cm(2)) photodetector arrays have been fabricated on 100 mm di
ameter InGaAs/InP epitaxial wafers. The lattice-matched In.53Ga.47As was de
posited by organometallic vapor-phase epitaxy upon sulfur-doped InP substra
tes. High-quality surface appearance and good uniformity of X-ray and photo
luminescence intensity and wavelength were observed. Over 360 linear arrays
of 256 or 512-element devices can be obtained from these 100mm diameter wa
fers and represent more than a four-fold yield increase over that obtained
with current industry standard of 50 mm diameter wafers. Good results from
320 x 240 element InGaAs/InP focal plane arrays fabricated on 75 mm diamete
r substrates were also obtained. (C) 2001 Elsevier Science B.V. All rights
reserved.