InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Authors
Aderhold, J Davydov, VY Fedler, F Klausing, H Mistele, D Rotter, T Semchinova, O Stemmer, J Graul, J
Citation
J. Aderhold et al., InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates, J CRYST GR, 222(4), 2001, pp. 701-705
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
222
Issue
4
Year of publication
2001
Pages
701 - 705
Database
ISI
SICI code
0022-0248(200102)222:4<701:ITFGBM>2.0.ZU;2-8
Abstract
In this priority communication it will be shown that InN thin films can be successfully grown using the metalorganic molecular beam epitaxy (MOMBE) me thod. For the first time the proper choice of growth conditions allows to o btain good quality InN thin films with a charge carrier concentration as lo w as 8.8 x 10(18)cm(-3). (C) 2001 Elsevier Science B.V. All rights reserved .