In this priority communication it will be shown that InN thin films can be
successfully grown using the metalorganic molecular beam epitaxy (MOMBE) me
thod. For the first time the proper choice of growth conditions allows to o
btain good quality InN thin films with a charge carrier concentration as lo
w as 8.8 x 10(18)cm(-3). (C) 2001 Elsevier Science B.V. All rights reserved
.