Electrochemical etching of highly conductive GaN single crystals

Authors
Nowak, G Xia, XH Kelly, JJ Weyher, JL Porowski, S
Citation
G. Nowak et al., Electrochemical etching of highly conductive GaN single crystals, J CRYST GR, 222(4), 2001, pp. 735-740
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
222
Issue
4
Year of publication
2001
Pages
735 - 740
Database
ISI
SICI code
0022-0248(200102)222:4<735:EEOHCG>2.0.ZU;2-C
Abstract
It is shown that the (0 0 0 1) Ga-polar surface of highly doped GaN single crystals can be etched anodically in the dark in dilute aqueous KOH solutio n. Two etching regimes involving electron tunneling and avalanche breakdown are defined. The electrochemistry and surface morphology encountered in ea ch regime are described. Possible applications of anodic etching are consid ered. (C) 2001 Elsevier Science B.V. All rights reserved.