The asymmetry of GaAs/A1GaAs quantum wells grown by molecular beam epitaxy
(MBE) and metal-organic chemical vapor deposition (MOCVD) is investigated b
y measuring the current-voltage (I-V) and responsivity characteristics of q
uantum well infrared photodetectors (QWIPs). Different asymmetry behaviors
were observed in MBE and MOCVD grown devices due to their different growth
mechanisms. Furthermore. the role of one of the post growth techniques, ion
implantation induced quantum well intermixing, on varying the asymmetry of
the MBE QWIPs was also studied. (C) 2001 Published by Elsevier Science B.V
.