Effect of In and Sn dopants on single-crystal growth and phase transformations in polycrystalline ZnS accompanying high-temperature strain

This paper discusses the variation of the microstructure, the x-ray phase c omposition, and the spectral composition of the emission of the polycrystal line materials ZnS-In and ZnS-Cu, Sn obtained in the temperature region of phase transitions accompanying high-temperature strain. It is established t hat the introduction into ZnS of about 5x10(-3)-10(-2) mass% of In or Sn im purities (in combination with Cu) causes intense twinning and growth of gra ins of the polycrystalline material in the hot-pressing temperature region of 930-1080 degreesC, with stabilization of the cubic phase. Data are prese nted concerning the formation of large single-crystal zones (20X20X2 mm) of the cubic modification in doped ceramic samples in the region of pressing temperatures of 1100 degreesC in a time no greater than 180 min. (C) 2001 T he Optical Society of America.