Semiconductor devices for RF applications: evolution and current status

Citation
F. Schwierz et Jj. Liou, Semiconductor devices for RF applications: evolution and current status, MICROEL REL, 41(2), 2001, pp. 145-168
Citations number
98
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
2
Year of publication
2001
Pages
145 - 168
Database
ISI
SICI code
0026-2714(200102)41:2<145:SDFRAE>2.0.ZU;2-P
Abstract
This paper reviews the history, evolution, current status, and applications of semiconductor devices for radio frequency (RF) applications. The most i mportant developments and major milestones leading to modern high-performan ce RF transistors are presented. Heterostructures, which are key elements f or some advanced RF transistors, are described, and an overview of the diff erent transistor types and their figures of merit is given. Applications of RF transistors in civil RF systems with special emphasis on wireless commu nication systems are addressed, and the issues of transistor reliability ar e also briefly discussed. (C) 2001 Elsevier Science Ltd. All rights reserve d.