X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages

Soft X-ray (similar to 10 keV) and near ultra-violet radiation based techni que for precise adjustment of MOS devices and integrated circuit thresholds has been developed. The possibility of the parameter adjustment is based o n the radiation controlled formation of thermally-and-field stable charge i n the phosphorus impurity contained gate oxides. Results of implementation of the ionizing radiation-based technique in the full-scale production of c ommercial MOS VLSI circuits are summarized. (C) 2001 Elsevier Science Ltd. All rights reserved.