Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems

Citation
G. Harsanyi et G. Inzelt, Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems, MICROEL REL, 41(2), 2001, pp. 229-237
Citations number
28
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
2
Year of publication
2001
Pages
229 - 237
Database
ISI
SICI code
0026-2714(200102)41:2<229:CMRSFA>2.0.ZU;2-7
Abstract
Various metallization types are applied in advanced high-density interconne ction systems, pure metals as well as alloys, showing very different abilit ies for forming migration short circuit failures. There are two conventiona lly applied empirical possibilities for getting information or comparison a bout the migration behaviour of a conductor system, the water drop test, an d the accelerated climatic tests, such as thermal humidity bias tests and t he highly accelerated stress test. The results are generally uncertain show ing large spreading and can only be interpreted with difficulties. A third method has also been developed and is presented in the paper for testing me tallization systems based on a powerful technique, this is the very well-kn own cyclic voltammetry (CV) used in electroanalytical chemistry. The result s indicate an effective method for making quick comparison between metalliz ation systems in connection with their migration abilities. Moreover, the C V method enables a better understanding of the electrochemical processes th at are the bases of the electrochemical migration. (C) 2001 Elsevier Scienc e Ltd. All rights reserved.