Low-frequency noise in single-poly bipolar transistors at low base currentdensity

This paper deals with the low-frequency noise of single-poly bipolar transi stors (SBJT) biased at low base current density. From Gummel plots and low- frequency noise measurements per-formed on many SBJTs made using the same p rocess, it is clearly demonstrated that the low-frequency noise is related to generation-recombination mechanisms (GR) that occur at the periphery of the emitter-base space charge region. A model which takes into account both the diffusion noise and the GR noise is proposed. A comparison with some m easurements performed on another BiCMOS technology and with some results of the literature validates this analysis. (C) 2001 Elsevier Science Ltd. All rights reserved.