THE ELECTRICAL-RESISTIVITY AND SPECIFIC-HEAT OF NIGA

Citation
Ls. Hsu et al., THE ELECTRICAL-RESISTIVITY AND SPECIFIC-HEAT OF NIGA, Modern physics letters B, 11(9-10), 1997, pp. 407-414
Citations number
50
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Physycs, Mathematical
Journal title
ISSN journal
02179849
Volume
11
Issue
9-10
Year of publication
1997
Pages
407 - 414
Database
ISI
SICI code
0217-9849(1997)11:9-10<407:TEASON>2.0.ZU;2-B
Abstract
The electrical resistivity and specific heat of NiGa were measured bet ween 5 and 296 K and between 1.07 and 300 K, respectively, at zero mag netic field. This compound is metallic as shown from the room-temperat ure resistivity value (37.4 mu Omega cm). The residual resistivity rat io is 1.32, which indicates the defect scattering dominates at low tem peratures. The density of states at the Fermi energy and the Debye tem perature obtained from the low-temperature specific-heat measurement a re 1.48 states/eV formula unit and 202 K, respectively. The former is much higher than the value for NiAl. This observation suggests that th e Ni d-band in NiGa is not completely filled.