Electronic properties of Ga(In)NAs alloys

A brief review on the present knowledge of the electronic properties of the Ga( In) NAs ternary and quaternary alloys is given mainly from an experime ntal perspective. The discussion is focused on Ga(In) NAs with low N compos ition (< 10 %), where a large amount of experimental work has been done. Im portant fundamental electronic properties of the material system are analyz ed with the emphasis on the nature of the giant band gap bowing in the allo y and nitrogen-induced modifications of the electronic structure of the con duction band. The current knowledge of the key material parameters, relevan t for the device applications, such as electron effective mass, recombinati on processes and band alignment in Ga(In)NAs/GaAs heterostructures, is also reviewed.