Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN

Authors
Goldys, EM Godlewski, M Paskova, T Pozina, G Monemar, B
Citation
Em. Goldys et al., Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN, MRS I J N S, 6(1), 2001, pp. 1-6
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
6
Issue
1
Year of publication
2001
Pages
1 - 6
Database
ISI
SICI code
1092-5783(2001)6:1<1:COREIN>2.0.ZU;2-X
Abstract
We report characterization of the red emission band in hydride vapor phase epitaxial GaN using cathodoluminescence spectroscopy and imaging and time-r esolved photoluminescence. The observed properties of the emission are cons istent with recombination of excitons bound at close donor-acceptor pairs. The time evolution of the emission signal during electron beam irradiation supports the association of the red emission with charged centres.