Defect engineering in CdTe, based on the total energies of elementary defects

Authors
Babentsov, V Corregidor, V Benz, K Fiederle, M Feltgen, T Dieguez, E
Citation
V. Babentsov et al., Defect engineering in CdTe, based on the total energies of elementary defects, NUCL INST A, 458(1-2), 2001, pp. 85-89
Citations number
23
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
458
Issue
1-2
Year of publication
2001
Pages
85 - 89
Database
ISI
SICI code
0168-9002(20010201)458:1-2<85:DEICBO>2.0.ZU;2-B
Abstract
This paper presents data on experimentally and theoretically deduced total energies and energy level positions in the band-gap for eight elementary de fects in CdTe. Based on these data, the total energy dependence on the Ferm i-level position in the band-gap is graphically analysed. Two types of defe ct reactions, which are responsible for cadmium vacancy (V-Cd) creation and transformation, are discussed. It is shown that the most probable candidat e for the native deep-level donor is a tellurium antisite. (C) 2001 Elsevie r Science B.V. All rights reserved.