Defect structure of CdZnTe

(Cd,Zn)Te single crystals fabricated in our laboratory by Vertical Gradient Freeze Method were subjected to two types of experiments. In the first exp eriment, samples were annealed at temperatures 600-900 degreesC under diffe rent Cd over-pressures. They were quenched after annealing to room temperat ure and Hall effect and conductivity measurements were performed. In the se cond experiment, in situ Hall effect and conductivity measurements on neigh bor samples were done also at temperatures 700-900 degreesC. We determined equilibrium concentrations of defects at temperatures 700-900 degreesC and the stoichiometry intrinsic line in the p-T diagram comparing the experimen ts and the theoretical model presented by Berding. Results of the presented analysis can be used to find optimal growth and annealing conditions to re duce precipitation of Cd/Te or to produce intrinsic material suitable for f abrication of (CdZn)Te gamma-ray detectors. (C) 2001 Elsevier Science B.V. All rights reserved.