Indium dopant behaviour in CdTe single crystals

Authors
Fochuk, P Panchuk, O Feychuk, P Shcherbak, L Savitskyi, A Parfenyuk, O Ilashchuk, M Hage-Ali, M Siffert, P
Citation
P. Fochuk et al., Indium dopant behaviour in CdTe single crystals, NUCL INST A, 458(1-2), 2001, pp. 104-112
Citations number
43
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
458
Issue
1-2
Year of publication
2001
Pages
104 - 112
Database
ISI
SICI code
0168-9002(20010201)458:1-2<104:IDBICS>2.0.ZU;2-O
Abstract
A brief review of different aspects of In atoms in the CdTe lattice behavio r, necessary for scientific preparation of radiation-sensitive material is presented. Data concerning the CdTe-In T-x phase diagram, In segregation, d iffusion and solubility as function of stoichiometric relations in CdTe and temperature are included. Low- and high-temperature electrical measurement s results are discussed in the framework of compensation phenomena. A short review concerning the manufacture of In-doped CdTe crystals as well as the ir practical use is included. (C) 2001 Elsevier Science B.V. All rights res erved.