F. Dubecky et al., On technology and performance of SAMO: X- and gamma-ray 32-pixel line detector based on semi-insulating GaAs and InP, NUCL INST A, 458(1-2), 2001, pp. 152-157
Electrical characteristics and detection performance of recently developed
and fabricated 32-pixel line array chip for detection of X- and gamma -rays
named "SAMO" based on semi-insulating GaAs and InP are reported. The chip
with dimensions of 7 x 2.4 x (0.2-0.3) mm(3) is mounted on a ceramic holder
. Single pixel has an active area of 2000 x (120-180) mum(2) with pitch of
220 mum. Current density of GaAs-based single pixel at a bias voltage of 12
0 V ranges between 15 and 60nA/mm(2). The threshold voltage ranges between
150 and 500V, Pulse-height spectra in both, side as well as top irradiation
modes measured using 59.5V and 122keV gamma -sources are demonstrated. The
best detection performance observed with GaAs-based SAMO line detector rea
ched charge collection efficiency of 85%, relative energy resolution in HWH
M 4%, and detection efficiency in the photopeak 52% (122keV, 300 K, the sid
e irradiation). Preliminary results obtained with InP-based SAMO line detec
tor are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.