Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy

We report on Junction Field Effect Transistors and PIN diodes monolithicall y integrated on high-resistivity silicon by adopting a non-standard technol ogy recently developed at IRST. In particular, a test structure, consisting of a small PIN diode DC-coupled to an integrated n-channel JFET in the dou ble-gate configuration was fully characterised and spectroscopic measuremen ts were carried out by adopting a novel double-feedback charge amplifier ci rcuit. An ENC of about 60 electrons r.m.s. has been obtained at room temper ature and at 10 mus shaping time: such a resolution is shown to be determin ed by the relatively high total capacitance present in this preliminary set -up. associated with the 1/f series noise of the transistor. (C) 2001 Elsev ier Science B.V. All rights reserved.