Room-temperature semiconductor device and array configurations

Citation
Mr. Squillante et al., Room-temperature semiconductor device and array configurations, NUCL INST A, 458(1-2), 2001, pp. 288-296
Citations number
21
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
458
Issue
1-2
Year of publication
2001
Pages
288 - 296
Database
ISI
SICI code
0168-9002(20010201)458:1-2<288:RSDAAC>2.0.ZU;2-D
Abstract
The use of high atomic number, room-temperature semiconductors for radiatio n detectors always involves making compromises to optimize the performance for specific applications. In recent years. a number of sophisticated devic e configurations and a variety of new read-out methods have been developed to extract the desired information from the detector signal. These approach es have significantly mitigated the effects of the inherent deficiencies fo und in available materials and have opened the way for promising new applic ations. The benefits of such approaches and their limitations are reviewed for CdTe and Cd1-xZnxTe (CZT) devices. (C) 2001 Elsevier Science B.V. All r ights reserved.