Investigation of performance of semi-insulating GaAs detectors irradiated by high gamma doses

Authors
Necas, V Anh, TL Sekacova, K Darmo, J Dubecky, F Perd'ochova, A
Citation
V. Necas et al., Investigation of performance of semi-insulating GaAs detectors irradiated by high gamma doses, NUCL INST A, 458(1-2), 2001, pp. 348-351
Citations number
6
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
458
Issue
1-2
Year of publication
2001
Pages
348 - 351
Database
ISI
SICI code
0168-9002(20010201)458:1-2<348:IOPOSG>2.0.ZU;2-Z
Abstract
We report here the preliminary results on liquid encapsulated Czochralski ( LEC) semi-insulating (SI) GaAs detectors after gamma irradiation. The detec tors have been irradiated with 1.17 and 1.33 MeV photons from Co-60 With do ses up to 19.2 kGy. Total doses correspond to the photon flux by the order of 10(13) gamma /mm(2) incident on the device. The detectors before and aft er exposure to various radiation doses have been characterised. The I-V cha racteristics for both polarities and pulse-height spectra versus voltage ap plied at the temperature of 295 K using 122keV Co-57 gamma -source were mea sured. A significant increase of charge-collection efficiency after irradia tion of detectors was observed. (C) 2001 Elsevier Science B.V. All rights r eserved.