On the development of compound semiconductor thallium bromide detectors for astrophysics

Citation
A. Owens et al., On the development of compound semiconductor thallium bromide detectors for astrophysics, NUCL INST A, 458(1-2), 2001, pp. 413-417
Citations number
7
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
458
Issue
1-2
Year of publication
2001
Pages
413 - 417
Database
ISI
SICI code
0168-9002(20010201)458:1-2<413:OTDOCS>2.0.ZU;2-J
Abstract
We discuss the detector requirements for future X-ray astrophysics missions and present preliminary results from our compound semiconductor program de signed to produce X-ray detectors with high spatial and spectral resolution across the energy range of 1-200 keV. Several prototype detectors have bee n fabricated from monocrystalline T1Br and tested at hard X-ray wavelengths in our laboratories and at the ESRF synchrotron research facility. Energy resolutions of 1.6 keV (FWHM) at 5.9 keV and 2.6 keV (FWHM) at 26 keV have been achieved, although we find that performance is highly variable due to polarisation effects. The resolution function is dominated by high leakage current at all energies. From pulse-height measurements of Am-241 as a func tion of detector bias, we derive the electron mobility-lifetime product at -2 degreesC to be (2.9 +/- 0.2) x 10(-4) cm(2) V-1. This is about an order of magnitude higher than previously reported values. (C) 2001 Elsevier Scie nce B.V. All rights reserved.