Semiconductor-cavity QED in high-Q regimes with q-deformed bosons - art. no. 023802

Citation
Yx. Liu et al., Semiconductor-cavity QED in high-Q regimes with q-deformed bosons - art. no. 023802, PHYS REV A, 6302(2), 2001, pp. 3802
Citations number
30
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW A
ISSN journal
10502947 → ACNP
Volume
6302
Issue
2
Year of publication
2001
Database
ISI
SICI code
1050-2947(200102)6302:2<3802:SQIHRW>2.0.ZU;2-8
Abstract
The high-density Frenkel excitons, which interact with a single-mode cavity field, are investigated in the framework of the q-deformed boson. It is sh own that the q-deformed bosonic commutation relations are satisfied natural ly by the exciton operators in the high-density limit. An analytical expres sion of the physical spectra of the excitons is obtained by using the dress ed states of the cavity field and the excitons. We also give the numerical study and compare the theoretical results with the experimental results.