Thermally activated ferroelectric domain growth due to random defects - art. no. 064104

Authors
Likodimos, V Labardi, M Orlik, XK Pardi, L Allegrini, M Emonin, S Marti, O
Citation
V. Likodimos et al., Thermally activated ferroelectric domain growth due to random defects - art. no. 064104, PHYS REV B, 6305(6), 2001, pp. 4104
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6305
Issue
6
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010201)6305:6<4104:TAFDGD>2.0.ZU;2-3
Abstract
Ferroelectric domain kinetics on cleaved triglycine sulfate, quenched at di fferent temperatures in the ferroelectric phase, is investigated in situ by scanning force microscopy in the dynamic contact mode. Thermally activated domain growth and dynamic scaling, in accordance with theoretical predicti ons for quenched disorder due to random-bond defects, is inferred from the temporal evolution of the spatial correlation functions and the related cha racteristic length scale.