Thermoluminescent study of porous silicon

Thermally stimulated luminescence (TSL) has been studied in highly porous s ilicon (por-Si) characterized by a non-monotonous dependence of the tempera ture quenching of the main orange-red photoluminescent (PL) band. It was sh own that the TSL glow curve consists of a narrow low-temperature peak (T-ma x approximate to 20 K) and a broad high-temperature component centered at 8 0 K. Unambiguous relation between the low-temperature TSL component and the emission band centered at lambda (max) approximate to 440 nm on the one ha nd, and the high-temperature TSL component and the orange-red emission band on the other hand, is established. Arguments linking the trap nature with defect states in SiO2 enveloping silicon nanowires art: given. (C) 2001 Els evier Science B.V. All rights reserved.